2sd1760 / 2sd1864 transistors power transistor (50v, 3a) 2sd1760 / 2sd1864 ! ! ! ! features 1) low v ce(sat) . v ce(sat) = 0.5v (typ.) (i c /i b = 2a / 0.2a) 2) complements the 2sb1184 / 2sb1243. ! ! ! ! structure epitaxial planar type npn silicon transistor ! ! ! ! external dimensions (units : mm) (1) base (2) collector (3) emitter (1) emitter (2) collector (3) base rohm : cpt3 eiaj : sc-63 rohm : atv 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. 2sd1760 2sd1864 ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol limits unit v cbo 60 v v ceo 50 v v ebo 5v i c 3 a (dc) 4.5 a (pulse) ? 1 tj 150 c tstg ? 55~ + 150 c 2sd1864 2sd1760 1 15 w (tc = 25 c) ? 2 p c ? 1 single pulse, p w = 100ms ? 2 printed circuit board, 1.7mm thick, collector copper plating 100mm 2 or larger. w collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation
2sd1760 / 2sd1864 transistors ! ! ! ! electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) f t cob min. 60 50 5 ? ? 82 390 ? ? ? ? ? ? ? ? ? 0.5 90 40 ? ? ? 1 1 1 ? ? vi c = 50 a i c = 1ma i e = 50 a v cb = 40v v eb = 4v v ce = 3v, i c = 0.5a v ce = 5v, i e =? 500ma, f = 30mhz i c /i b = 2a/0.2a ? ? ? v cb = 10v, i e = 0a, f = 1mhz v v a a ? v mhz pf typ. max. unit conditions ? measured using pulse current. collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance transition frequency ! ! ! ! packaging specifications and h fe package taping code 2sd1760 type tl 2500 h fe tv2 2500 ? ? 2sd1864 pqr pqr basic ordering unit (pieces) h fe values are classified as follows: item h fe r 180~390 q 120~270 p 82~180 ! ! ! ! electrical characteristic curves collector current : i c (a) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 0 10 0.01 2 5 1 0.2 0.5 0.1 0.02 0.05 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce = 3v 25 c ? 25 c ta = 100 c collector current : i c ( a) collector to emitter voltage : v ce ( v) fig.2 grounded emitter output characteristics ( ) 0 12345 0 0.5 1.0 1.5 2.0 2.5 3.0 15ma 20ma 25ma 30ma 35ma 40ma 50ma 10ma 5ma i b = 0ma 45ma ta = 25 c collector current : i c (a) collector to emitter voltage : v ce (v) fig.3 grounded-emitter output characteristics( ? ) 0 1020304050 0 0.5 1.0 1.5 2.0 2.5 3.0 ta = 25 c 50ma 45ma 40ma 35ma 30ma 25ma 15ma 10ma p c = 15w i b = 5ma 20ma dc current gain : h fe collector current : i c (a) fig.4 dc current gain vs. collector current( ) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 1000 500 200 100 50 20 10 5 2 1 ta = 25 c 10 v ce = 5v 3v dc current gain : h fe collector current : i c (a) fig.5 dc current gain vs. collector curren( ? ) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1000 500 200 100 50 20 10 5 2 1 v ce = 3v ta = 100 c ? 25 c 25 c collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.6 collector-emitter saturation voltage vs. collector current 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 ta = 25 c i c /i b = 50 20 10
2sd1760 / 2sd1864 transistors collector current : i c (a) collector saturation voltage : v ce (sat) (v) base saturation voltage : v be (sat) (v) fig.7 collector-emitter saturation voltage vs. collector current base-emitter saturation voltage vs. collector current 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 l c /l b = 10 v be (sat) v ce (sat) ta = ? 25 c 100 c 25 c 25 c ta = 100 c ? 25 c emitter current : ? i e (ma) transition frequency : f t (mhz) fig.8 gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 5001000 1000 500 200 50 20 100 10 2 5 1 ta = 25 c v ce = 5v collector output capacitance : cob (pf) collector to base voltage : v cb (v) fig.9 collector output capacitance vs. collector-base voltage 0.1 0.2 0.5 1 2 5 10 20 50 100 100 200 500 1000 10 20 50 2 5 1 ta = 25 c f = 1mhz i e = 0a collector current : i c (a) collector to emitter voltage : v ce (v) fig.10 safe operating area (2sd1760) 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 0.2 0.5 1 2 5 10 20 50 100 ta = 25 c ? single pulse p w = 10ms ? p w = 100ms ? dc v ce =5v i c =0.2a 1 10 1sec 10sec 100sec 100 1 0.1 10 100 time : t (ms) transient thermal resistance : r th ( c/w) fig.11 transient thermal resistance (2sd1760) 0.2 0.5 1 2 5 10 20 50 100 5 2 1 0.1 0.2 0.5 0.02 0.05 collector to emitter voltage : v ce (v) collector current : i c (a) ta=25 c single nonrepetitive pulse pw=10ms pw=100ms dc fig.12 safe operating area (2sd1864) 1 10 100 1 10sec 100sec 1000sec 10 1 100 0.1 time : t (ms) transient thermal resistance : r th ( c/w) fig.13 transient thermal resistance (2sd1864)
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